simulation
2D Device Lab
Explore a monolayer MoS2 back-gate FET in an interactive 3D workspace: staged device layers, camera views, gate/drain bias and ideal current curves. Educational model; not an experimentally calibrated device simulator.
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Overview

Features
- Live Chinese / English selection without resetting the model
- Interactive staged device layers and camera transitions
- Gate/drain controls linked to ideal current curves and planar electron drift markers
- Separate ideal 1H-MoS2 atomic inset at angstrom scale
- Scientific assumptions, references, independent AI review and JSON parameter export retained
Version history
Bilingual controls, scientific notes and review record.
v0.4.0
Not open for download
First public browser release of the reviewed interactive educational workspace.
Updates & usage guides
Follow our WeChat and Xiaohongshu accounts for 2D Device Lab version updates, tutorials and case studies.
WeChat Official Account
迷之炼金术士
WeChat ID:wband2046

Xiaohongshu
向天歌
Xiaohongshu ID:231054605
